MWI25-12E7 Datasheet - IXYS

MWI25-12E7 IGBT Module

MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 52 A VCES = 1200 V VCE(sat) typ. = 1.9 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 1 59 2 6 10 3 7 11 4 8 12 17 16 15 14 E72873 See outline drawing for pin arrangement Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; clamped inductiv.

MWI25-12E7 Features

* NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current

MWI25-12E7-IXYS.pdf