MWI451-17E9 Datasheet (IXYS)

MWI451-17E9, IGBT Module

MWI 451-17 E9 IGBT Modules Sixpack IC60 = 475 A VCES = 1700 V VCE(sat) typ = 2.25 V Preliminary data 2 46 phase-out IGBTs Symbol VCES VGES IC25 IC60 IC80 RBSOA tSC (SCSOA) Ptot 15 28 16 17 29 13 14 20 21 22 11/12 18 19 1 25 26 27 9/10 23 24 3 7/8 5 Conditions TVJ = 25°C to 125°C TC = 25°C TC = 60°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 1200 V; VGE = ±15 V; RG = 3.3 Ω; TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum Ratings 1700 V ±

MWI451-17E9 Features

* - NPT3 IGBT technology - low saturation voltage - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy parallelling - MOS input, voltage controlled - ultra fast free wheeling diodes - solderable pins for PCB mounting - package w