Datasheet Details
- Part number
- IXFN44N60
- Manufacturer
- IXYS Corporation
- File Size
- 128.90 KB
- Datasheet
- IXFN44N60_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN44N60 Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR .
IXFN44N60 Features
* International standard package
* miniBLOC, with Aluminium nitride
* isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifi
IXFN44N60 Applications
* Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 2 130 V V nA mA mA mW
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode
power supplies
VDSS VGH(th) IGSS ID
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