IXFV26N60P - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

IXYS Corporation

IXFV26N60P Description

Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode A.

IXFV26N60P Features

* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤

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Datasheet Details

Part number: IXFV26N60P
Manufacturer: IXYS Corporation
File Size: 269.78 KB
Datasheet: IXFV26N60P_IXYSCorporation.pdf
Description: N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

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N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

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IXFV26N60P Stock/Price