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2SA1050 POWER TRANSISTOR

2SA1050 Description

isc Silicon PNP Power Transistor 2SA1050 .
High Current Capability. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min. Complement to Type 2SC2460. Minimum Lot-to-Lot.

2SA1050 Applications

* Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Pow

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