2SA1073 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1073 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). Fast Switching Speed. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SA1073
Manufacturer: Inchange Semiconductor
File Size: 312.97 KB
Datasheet: 2SA1073_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* High frequency power amplifier
* Audio power amplifiers
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC C

2SA1073 Distributors

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2SA1073 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1073-like datasheet