2SA1075 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1075 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC2525. Minimum Lot-to-Lot.

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2SA1075 Datasheet Preview — Preview of 2SA1075 PDF

Datasheet Specifications

Part number: 2SA1075
Manufacturer: Inchange Semiconductor
File Size: 181.67 KB
Datasheet: 2SA1075_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications
* switching regulators
* DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-

2SA1075 Distributors

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2SA1075 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1075-like datasheet