2SA1075 Datasheet - Inchange Semiconductor

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2SA1075 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1075 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC2525. Minimum Lot-to-Lot.

2SA1075_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1075

Manufacturer:

Inchange Semiconductor

File Size:

181.67 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications
* switching regulators
* DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-

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2SA1075 POWER TRANSISTOR Inchange Semiconductor

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