2SA1076 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC2526. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1076
Manufacturer: Inchange Semiconductor
File Size: 219.58 KB
Datasheet: 2SA1076_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications
* switching regulators
* DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current-

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2SA1076 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1076-like datasheet