2SA1079 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1079 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SA1079
Manufacturer: Inchange Semiconductor
File Size: 215.05 KB
Datasheet: 2SA1079_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* High frequency power amplifiers
* Audio power amplifiers and drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Coll

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2SA1079 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1079-like datasheet