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2SA1185 POWER TRANSISTOR

2SA1185 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min. Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.

2SA1185 Applications

* Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Colle

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