Datasheet4U Logo Datasheet4U.com

2SA1185 - POWER TRANSISTOR

Product Overview

📥 Download Datasheet

Datasheet preview – 2SA1185

Datasheet Details

Part number 2SA1185
Manufacturer Inchange Semiconductor
File Size 223.45 KB
Description POWER TRANSISTOR
Datasheet download datasheet 2SA1185 Datasheet
Additional preview pages of the 2SA1185 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A Good Linearity of hFE Large Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter V

📁 Similar Datasheet

  • 2SA1180 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1182 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA1182-HF - PNP Transistors (Kexin)
  • 2SA1184 - Silicon PNP Transistor (Toshiba)
  • 2SA1186 - Silicon PNP Epitaxial Planar Transistor (Sanken electric)
  • 2SA1187 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1188 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA1189 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |