2SA1185 - POWER TRANSISTOR
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A *Good Linearity of hFE *Large Collector Current *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION
