2SA1259 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -2. Low Collector-Emitter Saturation Voltage : VCE(sat) = -1. Compleme.

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Datasheet Specifications

Part number: 2SA1259
Manufacturer: Inchange Semiconductor
File Size: 214.58 KB
Datasheet: 2SA1259-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Conti

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2SA1259 Silicon PNP Power Transistors Inchange Semiconductor

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