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2SA1259 Silicon PNP Power Transistors

2SA1259 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -2. Low Collector-Emitter Saturation Voltage : VCE(sat) = -1. Compleme.

2SA1259 Applications

* Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Conti

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Datasheet Details

Part number
2SA1259
Manufacturer
Inchange Semiconductor
File Size
214.58 KB
Datasheet
2SA1259-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SA1259-like datasheet