TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 2SA1255 High Voltage Switching Applications Unit: mm High voltage: VCBO = 200 V (min) VCEO = 200 V (min) Small package Complementary to 2SC3138 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage
2SA1255_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SA1255
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
229.40 KB
Description:
Silicon pnp triple diffused transistor.