2SA1360 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1360 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min). Complement to Type 2SC3423. Minimum Lot-to-Lot variations for robust device.

📥 Download Datasheet

2SA1360 Datasheet Preview — Preview of 2SA1360 PDF

Datasheet Specifications

Part number: 2SA1360
Manufacturer: Inchange Semiconductor
File Size: 216.15 KB
Datasheet: 2SA1360_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -50 mA IB Base Current

2SA1360 Distributors

📁 Related Datasheet

2SA1361 2SA1362 2SA1363 2SA1364 2SA1365 2SA1366

📌 All Tags

2SA1360 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1360-like datasheet