2SA1387 Datasheet - Inchange Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

2SA1387 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1387 .
High DC Current Gain- : hFE= 150(Min. High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= -0.

2SA1387_InchangeSemiconductor.pdf

2SA1387 Datasheet Preview — Preview of 2SA1387 PDF

Datasheet Details

Part number:

2SA1387

Manufacturer:

Inchange Semiconductor

File Size:

214.01 KB

Description:

POWER TRANSISTOR

Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A IB Base Current-Continu

2SA1387 Distributors

📁 Related Datasheet

2SA1380 2SA1381 2SA1382 2SA1383 2SA1384 2SA1385

📌 All Tags

2SA1387 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1387-like datasheet