2SA1389 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1389 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). High Speed Switching. Wide Area of Safe Operation. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SA1389
Manufacturer: Inchange Semiconductor
File Size: 218.62 KB
Datasheet: 2SA1389_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* High frequency power amplifiers
* Audio power amplifiers
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continu

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2SA1389 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1389-like datasheet