2SA1389 Datasheet - Inchange Semiconductor

2SA1389, POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1389 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). High Speed Switching. Wide Area of Safe Operation. Minimum Lot-to-Lot vari.

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Datasheet Details

Part number:

2SA1389

Manufacturer:

Inchange Semiconductor

File Size:

218.62 KB

Description:

POWER TRANSISTOR

Applications

* High frequency power amplifiers
* Audio power amplifiers
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continu

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2SA1389 POWER TRANSISTOR Inchange Semiconductor

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