2SA1695 POWER TRANSISTOR

Inchange Semiconductor

Description

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 .
High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min). Good Linearity of hFE. Complement to Type 2SC4468 APPLICATIONS. Design.

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Datasheet Specifications

Part number: 2SA1695
Manufacturer: Inchange Semiconductor
File Size: 108.55 KB
Datasheet: 2SA1695_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB B Base Current-Con

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2SA1695 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1695-like datasheet