2SC2526 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min). Good Linearity of hFE. Complement to Type 2SA1076. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SC2526
Manufacturer: Inchange Semiconductor
File Size: 224.14 KB
Datasheet: 2SC2526-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipat

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2SC2526 Silicon NPN Power Transistor Inchange Semiconductor

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