2SD1191 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1191 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 3. Low Saturation Voltage. C.

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Datasheet Specifications

Part number: 2SD1191
Manufacturer: Inchange Semiconductor
File Size: 210.73 KB
Datasheet: 2SD1191_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

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2SD1191 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1191-like datasheet