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2SD1191 - Silicon NPN Darlington Power Transistor

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Part number 2SD1191
Manufacturer Inchange Semiconductor
File Size 210.73 KB
Description Silicon NPN Darlington Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 3.5A Low Saturation Voltage Complement to Type 2SB881 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-E

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