2SD1192 Datasheet - Inchange Semiconductor

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2SD1192 Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 5. Low Saturation Voltage. C.

2SD1192_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1192

Manufacturer:

Inchange Semiconductor

File Size:

211.55 KB

Description:

Silicon NPN Darlington Power Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collect

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2SD1192 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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