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2SD1192 Datasheet - Inchange Semiconductor

2SD1192 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 5.0A *Low Saturation Voltage *Complement to Type 2SB882 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor .

2SD1192_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1192

Manufacturer:

Inchange Semiconductor

File Size:

211.55 KB

Description:

Silicon npn darlington power transistor.

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2SD1192 2SD1192 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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