Datasheet4U Logo Datasheet4U.com

2SD1192

Silicon NPN Darlington Power Transistor

2SD1192 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 5.0A *Low Saturation Voltage *Complement to Type 2SB882 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor .

2SD1192 Datasheet (211.55 KB)

Preview of 2SD1192 PDF

Datasheet Details

Part number:

2SD1192

Manufacturer:

Inchange Semiconductor

File Size:

211.55 KB

Description:

Silicon npn darlington power transistor.

📁 Related Datasheet

2SD1190 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1190 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)

2SD1191 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1191 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)

2SD1192 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1193 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1193 NPN Transistor (INCHANGE)

2SD1193 SILICON POWER TRANSISTOR (SavantIC)

2SD1194 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1194 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SD1192 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Image Gallery

2SD1192 Datasheet Preview Page 2

2SD1192 Distributor