2SD1195 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1195 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 2. Low Saturation Voltage.

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Datasheet Specifications

Part number: 2SD1195
Manufacturer: Inchange Semiconductor
File Size: 210.76 KB
Datasheet: 2SD1195_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Cu

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2SD1195 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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