Datasheet4U Logo Datasheet4U.com

2SD1195 - Silicon NPN Darlington Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD1195

Datasheet Details

Part number 2SD1195
Manufacturer Inchange Semiconductor
File Size 210.76 KB
Description Silicon NPN Darlington Power Transistor
Datasheet download datasheet 2SD1195 Datasheet
Additional preview pages of the 2SD1195 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 2.5A Low Saturation Voltage Complement to Type 2SB885 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collecto

📁 Similar Datasheet

  • 2SD1190 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1191 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1192 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1193 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1194 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1196 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1197 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SD1198 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by Inchange Semiconductor
  • 2SD1113 - Silicon NPN Power Transistor
  • 2SD1117 - Silicon NPN Power Transistor
  • 2SD1118 - Silicon NPN Power Transistor
  • 2SD1126 - Silicon NPN Darlington Power Transistor
  • 2SD1127 - Power Transistor
  • 2SD1141 - Power Transistor
Published: |