2SD1195 Datasheet, Transistor, Inchange Semiconductor

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2SD1195

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn darlington power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)

High DC Current Gain : hFE= 1500(Min) @IC= 2.5A

2SD1195 Application

• Applications
• Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(T

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2SD1195

Inchange Semiconductor

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