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2SD1195

Silicon NPN Darlington Power Transistor

2SD1195 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 1500(Min) @IC= 2.5A *Low Saturation Voltage *Complement to Type 2SB885 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor.

2SD1195 Datasheet (210.76 KB)

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Datasheet Details

Part number:

2SD1195

Manufacturer:

Inchange Semiconductor

File Size:

210.76 KB

Description:

Silicon npn darlington power transistor.

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