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2SD1576 Datasheet - Inchange Semiconductor

2SD1576 - Power Transistor

*High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) *High Switching Speed *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE .

2SD1576_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1576

Manufacturer:

Inchange Semiconductor

File Size:

209.61 KB

Description:

Power transistor.

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