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2SD1576 - Power Transistor

2SD1576 Description

isc Silicon NPN Power Transistor 2SD1576 .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

2SD1576 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector C

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1576-like datasheet