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2SD157 Datasheet - INCHANGE

2SD157 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use .

2SD157-INCHANGE.pdf

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Datasheet Details

Part number:

2SD157

Manufacturer:

INCHANGE

File Size:

176.67 KB

Description:

Npn transistor.

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