2SD157 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD157 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Wi.

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Datasheet Specifications

Part number: 2SD157
Manufacturer: INCHANGE
File Size: 176.67 KB
Datasheet: 2SD157-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-

2SD157 Distributors

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2SD157 NPN Transistor INCHANGE

INCHANGE 2SD157-like datasheet