2SD157 Datasheet - INCHANGE

2SD157, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD157 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Wi.

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2SD157-INCHANGE.pdf

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Datasheet Details

Part number:

2SD157

Manufacturer:

INCHANGE

File Size:

176.67 KB

Description:

NPN Transistor

Applications

* Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-

2SD157 Distributors

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2SD157 NPN Transistor INCHANGE

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