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2SD1575 Silicon NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1200V (Min). High Switching Speed. High Reliability. Wide Area of Safe Operation. Minimum Lot-to-.

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Datasheet Specifications

Part number
2SD1575
Manufacturer
Inchange Semiconductor
File Size
209.00 KB
Datasheet
2SD1575-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

Applications

* Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage 1200 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Cur

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