2SD523 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown VCE=80V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Voltage- : VCE (sat)=.

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Datasheet Specifications

Part number: 2SD523
Manufacturer: Inchange Semiconductor
File Size: 207.07 KB
Datasheet: 2SD523_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 7 A IB Base Current-Continunous PC

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2SD523 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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