2SD523 Datasheet - Inchange Semiconductor

2SD523, Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown VCE=80V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@I

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 7 A IB Base Current-Continunous PC

2SD523_InchangeSemiconductor.pdf