MJE182G Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G .
Collector. Emitter Sustaining Voltage. : VCEO(SUS) = 80 V. DC Current Gain. : hFE = 30(Min) @ IC= 0.

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Datasheet Specifications

Part number: MJE182G
Manufacturer: Inchange Semiconductor
File Size: 137.89 KB
Datasheet: MJE182G-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Low power audio amplifier
* Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Co

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MJE182G Silicon NPN Power Transistor Inchange Semiconductor

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