Datasheet4U Logo Datasheet4U.com

MJE182G - Silicon NPN Power Transistor

MJE182G Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G .
Collector. Emitter Sustaining Voltage. : VCEO(SUS) = 80 V. DC Current Gain. : hFE = 30(Min) @ IC= 0.

MJE182G Applications

* Low power audio amplifier
* Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Co

📥 Download Datasheet

Preview of MJE182G PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJE182G
Manufacturer
Inchange Semiconductor
File Size
137.89 KB
Datasheet
MJE182G-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • MJE182 - NPN PLASTIC POWER TRANSISTORS (CDIL)
  • MJE18204 - POWER TRANSISTORS (Motorola)
  • MJE18206 - POWER TRANSISTORS (Motorola)
  • MJE180 - NPN PLASTIC POWER TRANSISTORS (CDIL)
  • MJE18002 - NPN Transistor (INCHANGE)
  • MJE18002D2 - POWER TRANSISTORS (Motorola)
  • MJE18004 - NPN Transistor (INCHANGE)
  • MJE18004D2 - POWER TRANSISTORS (Motorola)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJE182G-like datasheet