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2SA1102 - POWER TRANSISTOR

2SA1102 Description

isc Silicon PNP Power Transistor 2SA1102 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device performa.

2SA1102 Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuo

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