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2SA1184 POWER TRANSISTOR

2SA1184 Description

isc Silicon PNP Power Transistor 2SA1184 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min). Complement to Type 2SC2824. Minimum Lot-to-Lot variations for robust dev.

2SA1184 Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IB Base Cur

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