Datasheet4U Logo Datasheet4U.com

2SA1187 POWER TRANSISTOR

2SA1187 Description

isc Silicon PNP Power Transistor 2SA1187 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. Complement to Type 2SC2838. Minimum Lot-to-Lot.

2SA1187 Applications

* For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous

📥 Download Datasheet

Preview of 2SA1187 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1180 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1182 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA1182-HF - PNP Transistors (Kexin)
  • 2SA1184 - Silicon PNP Transistor (Toshiba)
  • 2SA1185 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1186 - Silicon PNP Epitaxial Planar Transistor (Sanken electric)
  • 2SA1188 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA1189 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1187-like datasheet