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2SA1360 POWER TRANSISTOR

2SA1360 Description

isc Silicon PNP Power Transistor 2SA1360 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min). Complement to Type 2SC3423. Minimum Lot-to-Lot variations for robust device.

2SA1360 Applications

* Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -50 mA IB Base Current

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