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2SA1387 POWER TRANSISTOR

2SA1387 Description

isc Silicon PNP Power Transistor 2SA1387 .
High DC Current Gain- : hFE= 150(Min. High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= -0.

2SA1387 Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A IB Base Current-Continu

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