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2SB1261-K - Silicon NPN Power Transistor

2SB1261-K Description

isc Silicon NPN Power Transistors .
Low Collector Saturation Voltage. High Power Dissipation- : PC= 10W(Max)@TC=25℃. Complement to Type 2SD1899-K. Minimum Lot-to-Lot var.

2SB1261-K Applications

* Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current

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Datasheet Details

Part number
2SB1261-K
Manufacturer
Inchange Semiconductor
File Size
211.85 KB
Datasheet
2SB1261-K-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
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