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2SC3552 - Silicon NPN Power Transistor

2SC3552 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device performanc.

2SC3552 Applications

* Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Pe

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Datasheet Details

Part number
2SC3552
Manufacturer
Inchange Semiconductor
File Size
202.18 KB
Datasheet
2SC3552_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC3552-like datasheet