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2SD1233 - Power Transistor

2SD1233 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1500(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min. Minimum Lot-to-Lot.

2SD1233 Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collect

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