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2SD1378 Power Transistor

2SD1378 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Saturation Voltage - : VCE(sat)= 0. Complement to Type 2.

2SD1378 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipatio

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Power Transistor Inchange Semiconductor
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