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2SD873 - Power Transistor

2SD873 Description

isc Silicon NPN Power Transistor 2SD873 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot vari.

2SD873 Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitte

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Datasheet Details

Part number
2SD873
Manufacturer
Inchange Semiconductor
File Size
204.04 KB
Datasheet
2SD873_InchangeSemiconductor.pdf
Description
Power Transistor

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD873-like datasheet

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