Datasheet4U Logo Datasheet4U.com

BDX73 Silicon NPN Power Transistor

BDX73 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operatio.

BDX73 Applications

* Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current

📥 Download Datasheet

Preview of BDX73 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDX73
Manufacturer
Inchange Semiconductor
File Size
211.35 KB
Datasheet
BDX73-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BDX75 - NPN Transistor (INCHANGE)
  • BDX77 - SILICON POWER TRANSISTOR (SavantIC)
  • BDX77F - NPN Transistor (INCHANGE)
  • BDX78 - PNP PLASTIC POWER TRANSISTORS (CDIL)
  • BDX78F - PNP Transistor (INCHANGE)
  • BDX10 - Bipolar NPN Device (Seme LAB)
  • BDX11 - Bipolar NPN Device (Seme LAB)
  • BDX12 - Bipolar NPN Device (Seme LAB)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BDX73-like datasheet