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BDY26C - Silicon NPN Power Transistor

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Datasheet Details

Part number
BDY26C
Manufacturer
Inchange Semiconductor
File Size
207.06 KB
Datasheet
download datasheet BDY26C-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

BDY26C Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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