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KTC4370A - Silicon NPN Power Transistors

KTC4370A Description

isc Silicon NPN Power Transistor KTC4370A .
High Collector-Emitter Breakdown Voltage VCEO= 180V(Min). Complement to Type KTA1659A. Minimum Lot-to-Lot variations for robust device pe.

KTC4370A Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector

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Datasheet Details

Part number
KTC4370A
Manufacturer
Inchange Semiconductor
File Size
216.20 KB
Datasheet
KTC4370A-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor KTC4370A-like datasheet