Datasheet4U Logo Datasheet4U.com

MBR20H150CT Schottky Barrier Rectifier

MBR20H150CT Description

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT .

MBR20H150CT Features

* Dual rectifier construction，positive center tap
* Low Power Loss,High Efficiency
* Guard ring for overvoltage protection
* Metal of silicon rectifier, majonty carrier conduction
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable ope

MBR20H150CT Applications

* For use in high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM TJ Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepeti

📥 Download Datasheet

Preview of MBR20H150CT PDF
datasheet Preview Page 2

📁 Related Datasheet

  • MBR20H150CTG - Power Rectifier (ON Semiconductor)
  • MBR20H100C - HIGH VOLTAGE POWER SCHOTTKY RECTIFIER (Diodes)
  • MBR20H100CT - 20.0AMPS. Schottky Barrier Rectifiers (Taiwan Semiconductor)
  • MBR20H100CTG - SWITCHMODE Power Rectifier (ON Semiconductor)
  • MBR20H200CT - 20.0AMPS. Schottky Barrier Rectifiers (Taiwan Semiconductor)
  • MBR20H35CT - Dual Schottky Barrier Rectifier (Vishay Siliconix)
  • MBR20H45CT - Dual Schottky Barrier Rectifier (Vishay Siliconix)
  • MBR20H50CT - Dual Schottky Barrier Rectifier (Vishay Siliconix)

📌 All Tags

Schottky Barrier Rectifier Inchange Semiconductor
Inchange Semiconductor MBR20H150CT-like datasheet