Datasheet4U Logo Datasheet4U.com

TIP35E Silicon NPN Power Transistor

TIP35E Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE= 25(Min)@IC = 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min). Complement to Type TIP36E. C.

TIP35E Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

📥 Download Datasheet

Preview of TIP35E PDF
datasheet Preview Page 2

Datasheet Details

Part number
TIP35E
Manufacturer
Inchange Semiconductor
File Size
219.62 KB
Datasheet
TIP35E-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • TIP35 - Complementary Silicon Power Transistor (nELL)
  • TIP3526 - Infrared Touch Panels (Vishay Intertechnology)
  • TIP35A - Complementary Silicon Power Transistor (nELL)
  • TIP35AB - NPN Transistor (INCHANGE)
  • TIP35AF - POWER TRANSISTORS (CDIL)
  • TIP35AT - NPN Transistor (INCHANGE)
  • TIP35B - Complementary Silicon Power Transistor (nELL)
  • TIP35BF - POWER TRANSISTORS (CDIL)

📌 All Tags

Inchange Semiconductor TIP35E-like datasheet