IPD26CN10NG

Power-Transistor

Infineon Technologies

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on)

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to JEDEC1) for target application Product Summary

IPD26CN10NG

Infineon ↗ Technologies

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Power-transistor.

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IPD26CN10NG Power-Transistor Infineon Technologies