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IPD220N06L3G Power-Transistor

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Description

Type OptiMOS(TM)3 Power-Transistor .

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Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, logic level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acco

Applications

* Type IPD220N06L3 G IPD220N06L3 G Product Summary V DS R DS(on),max ID 60 V 22 mΩ 30 A Package Marking PG-TO-252-3 220N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,

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