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IPD25CNE8NG - Power-Transistor

Infineon Technologies

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Datasheet Details

Part number: IPD25CNE8NG
Manufacturer: Infineon ↗ Technologies
File Size: 644.12 KB
Datasheet: IPD25CNE8NG-InfineonTechnologies.pdf
Description: Power-Transistor

IPD25CNE8NG Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 85 V 25 mΩ 35 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target application.
Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Pac.

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Power-Transistor Infineon Technologies

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