IPD250N06N3G Power-Transistor

Infineon Technologies

Description

Type OptiMOS(TM)3 Power-Transistor .

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Datasheet Specifications

Part number: IPD250N06N3G
Manufacturer: Infineon ↗ Technologies
File Size: 304.05 KB
Datasheet: IPD250N06N3G-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc

Applications

* Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy,

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IPD250N06N3G Power-Transistor Infineon Technologies

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