IPD250N06N3G Datasheet, Power-transistor, Infineon Technologies

IPD250N06N3G Features

  • Power-transistor
  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters
  • Excellent gate charge x R DS(on) product (FOM)
  • N-chan

PDF File Details

Part number:

IPD250N06N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

304.05kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPD250N06N3G 📥 Download PDF (304.05kb)
Page 2 of IPD250N06N3G Page 3 of IPD250N06N3G

IPD250N06N3G Application

  • Applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum

TAGS

IPD250N06N3G
Power-Transistor
Infineon Technologies

📁 Related Datasheet

IPD25CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPD25CN10N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche.

IPD25CN10NG - Power-Transistor (Infineon Technologies)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPD25CNE8NG - Power-Transistor (Infineon Technologies)
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charg.

IPD25N06S2-40 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.

IPD25N06S4L-30 - Power-Transistor (Infineon Technologies)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.

IPD200N15N3 - Power-Transistor (Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPD200N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanch.

IPD200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPD20N03L - OptiMOS Buck converter series (Infineon Technologies AG)
IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A .

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 60V 28A TO252-3
DigiKey
IPD250N06N3GBTMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts