IPD200N15N3 Datasheet, Power-transistor, Infineon

IPD200N15N3 Features

• Power-transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50

PDF File Details

Part number:

IPD200N15N3

Manufacturer:

Infineon ↗

File Size:

0.97MB

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPD200N15N3

Infineon

📁 Related Datasheet

IPD200N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanch.

IPD200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPD20N03L - OptiMOS Buck converter series (Infineon Technologies AG)
IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A .

IPD220N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanch.

IPD220N06L3 - Power-Transistor (Infineon)
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excelle.

IPD220N06L3G - Power-Transistor (Infineon Technologies)
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excelle.

IPD22N08S2L-50 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.

IPD250N06N3G - Power-Transistor (Infineon Technologies)
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excelle.

IPD25CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPD25CN10N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche.