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IPD200N15N3G - Power-Transistor

Infineon Technologies

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Datasheet Details

Part number: IPD200N15N3G
Manufacturer: Infineon ↗ Technologies
File Size: 0.97 MB
Datasheet: IPD200N15N3G-InfineonTechnologies.pdf
Description: Power-Transistor

IPD200N15N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target application.
Ideal for high-frequency switching and synchronous rectification.
Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G.

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Power-Transistor Infineon Technologies

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