IPU25CNE8NG Power-Transistor

Infineon Technologies

Description

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor .

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Datasheet Specifications

Part number: IPU25CNE8NG
Manufacturer: Infineon ↗ Technologies
File Size: 644.12 KB
Datasheet: IPU25CNE8NG-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 85 V 25 mΩ 35 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualif

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IPU25CNE8NG Power-Transistor Infineon Technologies

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