Datasheet Details
- Part number
- IGC114T170S8RH
- Manufacturer
- Infineon ↗
- File Size
- 124.95 KB
- Datasheet
- IGC114T170S8RH-Infineon.pdf
- Description
- IGBT
IGC114T170S8RH Description
IGC114T170S8RH IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Vers.
IGC114T170S8RH Features
* 1700V Trench + Field stop technology
* low switching losses and saturation losses
* soft turn off
* positive temperature coefficient
* easy paralleling
This chip is used for:
IGC114T170S8RH Applications
* drives
Chip Type
VCE
IC
Die Size
IGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
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