IGC114T170S8RM - IGBT

Datasheet Summary

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG A

Features

1700V Trench + Field stop technology.
low switching losses.
soft turn off.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGC114T170S8RM
Manufacturer	Infineon
File Size	196.67 KB
Description	IGBT
Datasheet	IGC114T170S8RM Datasheet
Additional preview pages of the IGC114T170S8RM datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text

IGC114T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.47 x 12.08 7.254 x 9.858 1.674 x 0.899 mm2 114.

Published: Feb 7, 2016 |