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IGC11T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC11T120T6L
VCE 1200V
ICn 8A
Die Size 3.48 x 3.19 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
3.48 x 3.19
1.965 x 1.716 0.608 x 0.608
mm 2
11.1 / 5.
IGC11T120T6L Datasheet
